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| HIGH-POWERGaAlAsIREMITTERS FEATURES EPOXY DOME .125 MAX ANODE (CASE) OD-880 .042 .046 .017 .209 .212 * Very high power output * Wide angle of emission * TO-46 Header * High reliability liquid-phase epitaxially grown GaAlAs .164 .167 .100 .041 All metal surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. .009 .012 1.00 MIN CATHODE .036 45 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25C PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10 A VR = 0V MIN 25 TYP 30 880 80 80 30 17 MAX UNITS mW nm nm Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.55 1.9 Volts Volts pF sec sec Deg 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25C CASE Power Dissipation1 Continuous Forward Current Reverse Voltage 190mW 100mA 5V 3A Peak Forward Current (10 s, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25C 2Derate linearly above 25C 260C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55C TO 100C 400C/W Typical 135C/W Typical 100C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HIGH-POWERGaAlAsIREMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (C) 100 NO HEAT SINK INFINITE HEAT SINK OD-880 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10 s t = 100 s t = 500 s 1 MAXIMUM RATINGS 0.1 t Ip T 0.1 D= t T 0.01 0.01 1 DUTY CYCLE, D (%) 10 100 TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE IF = 20mA RELATIVE POWER OUTPUT (%) 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 50mA 80 80 60 70 TCASE = 25C NO PRE BURN-IN PERFORMED 40 60 IF = 100mA 104 105 20 50 101 102 103 STRESS TIME, (hrs) 0 -100 -80 -60 -40 -20 0 20 40 BEAM ANGLE, (deg) 60 80 100 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 3 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 2 1 0 -25 0 25 50 AMBIENT TEMPERATURE (C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 40 POWER OUTPUT, P (mW) o 80 100 10 20 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com |
Price & Availability of OD-880
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